发明名称 |
SEMICONDUCTOR MEMORY DEVICE INCLUDING SLIMMING STRUCTURE |
摘要 |
Disclosed is a semiconductor memory device, including: a slimming structure extended from a cell structure in a direction parallel to the semiconductor substrate, the cell structure having a plurality of cell transistors stacked over a semiconductor substrate; vertical insulating materials extended in a direction crossing the semiconductor substrate and configured to divide the cell structure and the slimming structure into a plurality of memory blocks; contact plugs passing through the vertical insulating materials, respectively, within an area in which the slimming structure is formed; and Junctions formed within the semiconductor substrate under the vertical insulating materials, in which the junctions are coupled to the contact plugs, respectively. |
申请公布号 |
US2016351672(A1) |
申请公布日期 |
2016.12.01 |
申请号 |
US201514879971 |
申请日期 |
2015.10.09 |
申请人 |
SK hynix Inc. |
发明人 |
EOM Dae Sung |
分类号 |
H01L29/423;H01L29/10;H01L23/528;H01L29/792;H01L27/115 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor memory device, comprising:
a slimming structure extended from a cell structure in a direction parallel to the semiconductor substrate, the cell structure having a plurality of cell transistors stacked over a semiconductor substrate; vertical insulating materials extended in a direction crossing the semiconductor substrate and configured to divide the cell structure and the slimming structure into a plurality of memory blocks; contact plugs passing through the vertical insulating materials, respectively, within an area in which the slimming structure is formed; and junctions formed within the semiconductor substrate under the vertical insulating materials, wherein the junctions are coupled to the contact plugs, respectively. |
地址 |
Gyeonggi-do KR |