METHODS FOR FORMING WRAP AROUND CONTACT

摘要

Some embodiments of the present disclosure relate to a contact formed to a source or drain region of a “finned” field-effect transistor (FinFET). An epitaxial material is formed over the source or drain region, which includes a diamond-shaped cross-section with top and bottom surfaces. A capping layer is formed over the top and bottom surfaces. The source or drain region is subjected to a first etch to remove the capping layer surrounding the top surfaces of the diamond-shaped cross-section. A protective layer is formed within the top surfaces. A second etch of the capping layer is performed to remove the capping layer surrounding the bottom surfaces of the diamond-shaped cross-section, while using the protective layer to prevent etching of the top surfaces by the second etch. A contact is formed to the source or drain region, which surrounds the source or drain region on the top and bottom surfaces.

主权项

1. A semiconductor device, comprising:
a semiconductor fin extending vertically from a surface of a substrate and comprising source and drain regions, which are separated from one another by a channel region in the semiconductor fin; a gate overlying an upper surface and sidewalls of the channel region; and a contact coupled to the source or drain region of the semiconductor fin, wherein the source or drain region comprises a layer of epitaxial material with a substantially diamond-shaped cross-section, and wherein the contact surrounds the source or drain region on top and bottom surfaces of the substantially diamond-shaped cross-section.