SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

One memory cell region includes memory cells that are aligned in a first direction and a second direction orthogonal to the first direction, a word line contact region adjacent to the memory cell region in the first direction interposed by a dummy pattern region, and first and second word lines that span a plurality of active regions aligned in the first direction and extend from the memory cell region to the word line contact region. A first word line and a second word line adjacent to each other within one active region located in the memory cell region constitute a word line pair. A gap in the second direction between a first word line and a second word line that constitute a word line pair in the memory cell region is narrower than a gap in the second direction in the word line contact region.

主权项

1. A semiconductor device comprising:
a memory cell region in which memory cells are aligned on a semiconductor substrate in a first direction and a second direction orthogonal to the first direction; a word line contact region adjacent to the memory cell region in the first direction with a dummy pattern region therebetween; and a first word line and a second word line which extend from the memory cell region to the word line contact region across a plurality of active regions aligned in the first direction, wherein the first word line and the second word line are adjacent within one active region located in the memory cell region forming a word line pair, and the interval in the second direction in the memory cell region between the first word line and the second word line forming the word line pair being narrower than the interval in the second direction in the word line contact region.