发明名称 |
Light-emitting device and light-emitting apparatus |
摘要 |
A light-emitting device includes a photoluminescent layer that emits light containing first light, a light-transmissive layer located on or near the photoluminescent layer, and one or more reflectors. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The one or more reflector are located outside the submicron structure. The submicron structure includes at least projections or recesses and satisfies the following relationship:
λa/nwav-a<Dint<λa
where Dint is a center-to-center distance between adjacent projections or recesses, λa is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light. |
申请公布号 |
US9518215(B2) |
申请公布日期 |
2016.12.13 |
申请号 |
US201514618254 |
申请日期 |
2015.02.10 |
申请人 |
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. |
发明人 |
Hirasawa Taku;Inada Yasuhisa;Nakamura Yoshitaka;Hashiya Akira;Nitta Mitsuru;Yamaki Takeyuki |
分类号 |
H01L33/00;C09K11/00;H05B33/14;H01L33/50;C09K11/77 |
主分类号 |
H01L33/00 |
代理机构 |
McDermott Will & Emery LLP |
代理人 |
McDermott Will & Emery LLP |
主权项 |
1. A light-emitting device comprising:
a photoluminescent layer that has a first surface perpendicular to a thickness direction thereof and emits light containing first light, an area of the first surface being larger than a sectional area of the photoluminescent layer perpendicular to the first surface; a light-transmissive layer located on the photoluminescent layer; and one or more reflectors that are located directly on at least one of the photoluminescent layer and the light-transmissive layer, and at least partially surround the submicron structure, wherein at least one of the photoluminescent layer and the light-transmissive layer has a submicron structure comprising at least projections or recesses arranged perpendicular to a thickness direction of the photoluminescent layer, at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction of the photoluminescent layer, the first light being emitted from the light emitting surface, the submicron structure satisfies the following relationship:
λa/nwav-a<Dint<λa where Dint is a center-to-center distance between adjacent projections or recesses, λa is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light, and
a thickness of the photoluminescent layer, the refractive index of the photoluminescent layer and the center-to-center distance are set to limit a directional angle of the first light emitted from the light emitting surface. |
地址 |
Osaka JP |