发明名称 Light-emitting device and light-emitting apparatus
摘要 A light-emitting device includes a photoluminescent layer that emits light containing first light, a light-transmissive layer located on or near the photoluminescent layer, and one or more reflectors. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The one or more reflector are located outside the submicron structure. The submicron structure includes at least projections or recesses and satisfies the following relationship: λa/nwav-a<Dint<λa where Dint is a center-to-center distance between adjacent projections or recesses, λa is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light.
申请公布号 US9518215(B2) 申请公布日期 2016.12.13
申请号 US201514618254 申请日期 2015.02.10
申请人 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. 发明人 Hirasawa Taku;Inada Yasuhisa;Nakamura Yoshitaka;Hashiya Akira;Nitta Mitsuru;Yamaki Takeyuki
分类号 H01L33/00;C09K11/00;H05B33/14;H01L33/50;C09K11/77 主分类号 H01L33/00
代理机构 McDermott Will & Emery LLP 代理人 McDermott Will & Emery LLP
主权项 1. A light-emitting device comprising: a photoluminescent layer that has a first surface perpendicular to a thickness direction thereof and emits light containing first light, an area of the first surface being larger than a sectional area of the photoluminescent layer perpendicular to the first surface; a light-transmissive layer located on the photoluminescent layer; and one or more reflectors that are located directly on at least one of the photoluminescent layer and the light-transmissive layer, and at least partially surround the submicron structure, wherein at least one of the photoluminescent layer and the light-transmissive layer has a submicron structure comprising at least projections or recesses arranged perpendicular to a thickness direction of the photoluminescent layer, at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction of the photoluminescent layer, the first light being emitted from the light emitting surface, the submicron structure satisfies the following relationship: λa/nwav-a<Dint<λa where Dint is a center-to-center distance between adjacent projections or recesses, λa is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light, and a thickness of the photoluminescent layer, the refractive index of the photoluminescent layer and the center-to-center distance are set to limit a directional angle of the first light emitted from the light emitting surface.
地址 Osaka JP