METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES WITH COMBINED ARRAY AND PERIPHERY PATTERNING IN SELF-ALIGNED DOUBLE PATTERNING

摘要

Provided are improved semiconductor memory devices and methods for manufacturing such semiconductor memory devices. A method may incorporate the patterning of the array and periphery regions in self-aligned double patterning and provide semiconductor devices resulting from the combined patterning.

主权项

1. A semiconductor device comprising:
a substrate; a first word line pad formed on the substrate; and a second word line pad formed on the substrate, wherein a space is located between the first word line pad and the second word line pad, the space comprising a substantially rectangular region having a first width represented by a and a substantially semicircular region having a second width represented by b integrated with the substantially rectangular region, and wherein the width b is from about 1.5 to about 3.0 times the width a, and a radius of the substantially semicircular region is from about 50 nm to about 500 nm.