SEMICONDUCTOR DEVICE

摘要

In a semiconductor device, an insulating substrate housed in an housing opening portion of a resin case includes an insulating board, a first metal layer formed on the upper surface of the insulating board, a second metal layer which is formed on an outer peripheral edge portion of the upper surface of the insulating board and is in contact with a level difference portion, and a third metal layer formed on the under surface of the insulating board and leveled with or protruding from the under surface of the resin case. The first and second metal layers are formed by etching copper foil formed on the insulating board so that these metal layers have the same thickness. The thickness of the second metal layer may be changed relatively freely according to the housing depth of the resin case. Thus, the semiconductor device may be made thin.

主权项

1. A semiconductor device comprising:
a case having a level difference portion, the case further having, in a first principal plane of the case, a housing opening portion on whose inner periphery the level difference portion is formed; a substrate housed in the housing opening portion and including
an insulating board,a first metal layer being formed on a second principal plane of the insulating board,a second metal layer formed on an outer peripheral edge portion of the second principal plane and being in contact with the level difference portion, anda third metal layer formed on a third principal plane of the insulating board to be level with the first principal plane or to protrude from the first principal plane; and a semiconductor element disposed over the first metal layer.