发明名称 |
CHEMOEPITAXY ETCH TRIM USING A SELF ALIGNED HARD MASK FOR METAL LINE TO VIA |
摘要 |
A method of forming metal lines that are aligned to underlying metal features that includes forming a neutral layer atop a hardmask layer that is overlying a dielectric layer. The neutral layer is composed of a neutral charged di-block polymer. Patterning the neutral layer, the hardmask layer and the dielectric layer to provide openings that are filled with a metal material to provide metal features. A self-assembled di-block copolymer material is deposited on a patterned surface of the neutral layer and the metal features. The self-assembled di-block copolymer material includes a first block composition with a first affinity for alignment to the metal features. The first block composition of the self-assembled di-block copolymer is converted to a metal that is self-aligned to the metal features. |
申请公布号 |
US2016365280(A1) |
申请公布日期 |
2016.12.15 |
申请号 |
US201514738284 |
申请日期 |
2015.06.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Brink Markus;Guillorn Michael A.;Lin Chung-Hsun;Tsai HsinYu |
分类号 |
H01L21/768;H01L23/532;H01L23/528;H01L23/522;H01L21/02;H01L21/311 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming electrically conductive structures that are aligned to underlying metal features comprising:
forming a neutral layer overlying a dielectric layer; patterning the neutral layer and the dielectric layer to provide openings that are filled with a metal material to provide first metal features; depositing a self-assembled di-block copolymer material on a patterned surface of the neutral layer and the first metal features, the self-assembled di-block copolymer material includes a first block composition with a first affinity for alignment to the first metal features; converting the first block composition of the self-assembled di-block copolymer to second metal features that are self-aligned to the first metal features. |
地址 |
Armonk NY US |