发明名称 CHEMOEPITAXY ETCH TRIM USING A SELF ALIGNED HARD MASK FOR METAL LINE TO VIA
摘要 A method of forming metal lines that are aligned to underlying metal features that includes forming a neutral layer atop a hardmask layer that is overlying a dielectric layer. The neutral layer is composed of a neutral charged di-block polymer. Patterning the neutral layer, the hardmask layer and the dielectric layer to provide openings that are filled with a metal material to provide metal features. A self-assembled di-block copolymer material is deposited on a patterned surface of the neutral layer and the metal features. The self-assembled di-block copolymer material includes a first block composition with a first affinity for alignment to the metal features. The first block composition of the self-assembled di-block copolymer is converted to a metal that is self-aligned to the metal features.
申请公布号 US2016365280(A1) 申请公布日期 2016.12.15
申请号 US201514738284 申请日期 2015.06.12
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 Brink Markus;Guillorn Michael A.;Lin Chung-Hsun;Tsai HsinYu
分类号 H01L21/768;H01L23/532;H01L23/528;H01L23/522;H01L21/02;H01L21/311 主分类号 H01L21/768
代理机构 代理人
主权项 1. A method of forming electrically conductive structures that are aligned to underlying metal features comprising: forming a neutral layer overlying a dielectric layer; patterning the neutral layer and the dielectric layer to provide openings that are filled with a metal material to provide first metal features; depositing a self-assembled di-block copolymer material on a patterned surface of the neutral layer and the first metal features, the self-assembled di-block copolymer material includes a first block composition with a first affinity for alignment to the first metal features; converting the first block composition of the self-assembled di-block copolymer to second metal features that are self-aligned to the first metal features.
地址 Armonk NY US
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