FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH INTERCONNECT STRUCTURE

摘要

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first metal layer formed over a substrate and a dielectric layer formed over the first metal layer. The semiconductor device structure further includes an adhesion layer formed in the dielectric layer and over the first metal layer and a second metal layer formed in the dielectric layer. The second metal layer is electrically connected to the first metal layer, and a portion of the adhesion layer is formed between the second metal layer and the dielectric layer. The adhesion layer includes a first portion lining with a top portion of the second metal layer, and the first portion has an extending portion along a vertical direction.

主权项

1. A semiconductor device structure, comprising:
a first metal layer formed over a substrate; a dielectric layer formed over the first metal layer; an adhesion layer formed in the dielectric layer and over the first metal layer; and a second metal layer formed in the dielectric layer, wherein the second metal layer is electrically connected to the first metal layer, a portion of the adhesion layer is formed between the second metal layer and the dielectric layer, and wherein the adhesion layer comprises a first portion lining with a top portion of the second metal layer, and the first portion has an extending portion along a vertical direction.