| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched. The mask layer contains at least one type of a metal, boron, and carbon. The metal is selected from a group including tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium and iridium. A composition ratio of the metal is higher than a composition ratio of the boron and a composition ratio of the carbon. The method includes making a hole or a slit in the layer to be etched by performing a dry etching to the layer to be etched using the mask layer being patterned. |
| 申请公布号 |
US2016365249(A1) |
申请公布日期 |
2016.12.15 |
| 申请号 |
US201615179387 |
申请日期 |
2016.06.10 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Nakao Shinichi;Ochiai Shunsuke;Oshiki Yusuke;Watanabe Kei;Omura Mitsuhiro |
| 分类号 |
H01L21/033;H01L23/522;H01L23/528;H01L27/115;H01L21/768 |
主分类号 |
H01L21/033 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for manufacturing a semiconductor device, comprising:
forming a mask layer on a layer to be etched, the mask layer containing at least one type of a metal, boron, and carbon, the metal being selected from a group including tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium and iridium, a composition ratio of the metal being higher than a composition ratio of the boron and a composition ratio of the carbon; patterning the mask layer; and performing a dry etching to the layer to be etched using the mask layer being patterned. |
| 地址 |
Minato-ku JP |
