发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM |
摘要 |
A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor. |
申请公布号 |
US2016365246(A1) |
申请公布日期 |
2016.12.15 |
申请号 |
US201615175389 |
申请日期 |
2016.06.07 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
YAMAMOTO Ryuji;HIROSE Yoshiro |
分类号 |
H01L21/02;C23C16/455 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, the process including alternately performing:
supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, andsupplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor; and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. |
地址 |
Tokyo JP |