发明名称 |
Method for using a field implant mask to correct low doping levels at the outside edges of the base in a walled-emitter transistor structure |
摘要 |
An embodiment of the present invention is a process for semiconductor device having a silicon substrate. The process comprises positioning at least one field implant mask and field implanting a silicon substrate around a bipolar active region in a substrate such that boron atoms are blocked out of an active region, and only the field region surrounding said active area is implanted, said implanting such that a predetermined layout area of a semiconductor device does not need to be increased to compensate for a BVbso problem.
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申请公布号 |
US5258317(A) |
申请公布日期 |
1993.11.02 |
申请号 |
US19920835200 |
申请日期 |
1992.02.13 |
申请人 |
INTEGRATED DEVICE TECHNOLOGY, INC. |
发明人 |
LIEN, CHUEN-DER;TERRILL, KYLE W. |
分类号 |
H01L21/331;H01L21/762;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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