发明名称 |
Dual port random access memory |
摘要 |
A dual port random access memory (RAM). The dual port random access memory includes four N-MOS transistors and four P-MOS transistors. Both the N-MOS and the P-MOS transistors are used as pass gates. More specifically, two N-MOS transistors are used as pass gate for a set of bit lines and two P-MOS transistors are used as a pass gate to another set of bit lines.
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申请公布号 |
US6026012(A) |
申请公布日期 |
2000.02.15 |
申请号 |
US19980222008 |
申请日期 |
1998.12.30 |
申请人 |
UNITED MICROELECTRONIC CORP. |
发明人 |
HSUE, C. C. |
分类号 |
G11C8/16;(IPC1-7):G11C7/00 |
主分类号 |
G11C8/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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