发明名称 Sputtering target and production method thereof
摘要 The present invention provides a sputtering target which generates a reduced quantity of particles during a sputtering and a method for producing such a sputtering target. Mirror treatment is carried out to a sputter surface 2 which is sputtered when forming a thin film, so that the sputter surface 2 has an arithmetic mean roughness Ra of 0.01 mu m or below. A sputtering target 1 with such a smooth sputter surface 2 having a small surface roughness enables to reduce a number of particles generated during a sputtering.
申请公布号 US6024852(A) 申请公布日期 2000.02.15
申请号 US19970984132 申请日期 1997.12.03
申请人 SONY CORPORATION 发明人 TAMURA, HIDEMASA;YOKOYAMA, NORIO;SHIMIZU, EIICHI;SASAKI, FUMIO
分类号 C22C14/00;C23C14/34;(IPC1-7):C23C14/00 主分类号 C22C14/00
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