发明名称 |
Sputtering target and production method thereof |
摘要 |
The present invention provides a sputtering target which generates a reduced quantity of particles during a sputtering and a method for producing such a sputtering target. Mirror treatment is carried out to a sputter surface 2 which is sputtered when forming a thin film, so that the sputter surface 2 has an arithmetic mean roughness Ra of 0.01 mu m or below. A sputtering target 1 with such a smooth sputter surface 2 having a small surface roughness enables to reduce a number of particles generated during a sputtering.
|
申请公布号 |
US6024852(A) |
申请公布日期 |
2000.02.15 |
申请号 |
US19970984132 |
申请日期 |
1997.12.03 |
申请人 |
SONY CORPORATION |
发明人 |
TAMURA, HIDEMASA;YOKOYAMA, NORIO;SHIMIZU, EIICHI;SASAKI, FUMIO |
分类号 |
C22C14/00;C23C14/34;(IPC1-7):C23C14/00 |
主分类号 |
C22C14/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|