| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having high avalanche resistance. <P>SOLUTION: The semiconductor device includes a first conductivity type first silicon layer, a second silicon layer provided on the first silicon layer and having a resistance higher than that of the first silicon layer, a third silicon layer provided on the second silicon layer, a first nitride semiconductor layer provided on the third silicon layer, a first conductivity type second nitride semiconductor layer provided on the first nitride semiconductor layer and having a band gap larger than that of the first nitride semiconductor layer, a first main electrode connected with the third silicon layer while touching the surface of the second nitride semiconductor layer, a second main electrode connected with the first silicon layer while touching the surface of the second nitride semiconductor layer, and a control electrode provided between the first and second main electrodes on the second nitride semiconductor layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
