Verfahren zur Herstellung eines Feldeffekttransistors mit einem Floating Gate

摘要

According to a method for producing a field effect transistor having a floating gate, a structure is formed, which has open lateral flanks of a layer made of the material of the floating gate, and which is exposed to an oxidizing atmosphere in order to coat these lateral flanks and, at the same time, other areas of the structure with an insulating oxide layer. The invention provides that, at a point in time before the action of oxidizing atmosphere, nitrogen is implanted inside the material of the floating gate in an amount that significantly reduces the oxidation on the lateral flanks thereof.