发明名称 CATHODE SPUTTERING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a cathode sputtering method for depositing a thin gradient layer exhibiting the high correctness of the passage in the gradient and a high deposition rate and consisting of chemical compounds having a composition at least partially changing in a growth direction. SOLUTION: A new cathode sputtering method in a vacuum chamber for depositing a thin layer at least partially consisting of at least two chemical compounds, and in which the ratio of the compounds changes in a growth direction. At this time, the compounds are formed under at least the partial incorporation of the different components of a reactive gas mixture by the reactive sputtering of the same one kind of target material or the same two or more kinds of target materials, and the content of the reactive gas in the reactive gas components forming the layer follows prescribable time indication. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004360073(A) 申请公布日期 2004.12.24
申请号 JP20040160072 申请日期 2004.05.28
申请人 FRAUNHOFER GES 发明人 BARTZSCH HAGEN;GOTTFRIED CHRISTIAN;FRACH PETER;GOEDICKE KLAUS;LANGE STEPHAN
分类号 C23C14/34;C23C14/00;(IPC1-7):C23C14/34 主分类号 C23C14/34
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