<p>The present invention relates to an inorganic composition mainly containing a compound semiconductor, wherein the inorganic composition contains iridium element. The invention also relates to a method of producing an inorganic composite for producing an luminescent material, wherein the method comprises subjecting an inorganic composition mainly containing a compound semiconductor to an explosion by gunpowder and/or explosive in a sealed vessel. An inorganic composite for producing a luminescent material can be prepared by subjecting an inorganic composition to a doping treatment such as explosive treatment or heat-treatment. The inorganic composite can further be heat-treated to produce a luminescent material. The resulting luminescent material can be formed into a layer as a light emitter layer of an inorganic EL device.</p>
申请公布号
WO2007043676(A1)
申请公布日期
2007.04.19
申请号
WO2006JP320520
申请日期
2006.10.10
申请人
T. CHATANI CO., LTD.;UEDA, TADASHI;YAMAUCHI, SEIKOH;KANAMORI, JIRO;HAYASHI, YOSHISADA