发明名称 |
METHOD FOR PROGRAMMING A MULTILEVEL MEMORY |
摘要 |
A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method comprises programming the bits of the memory having a Vt level lower than the first PV level of the targeted programmed state such that at least one bit of them has a Vt level larger than a second PV level corresponding to a targeted programmed state, wherein the second PV level of the targeted programmed state is larger than the corresponding first PV level; and programming only the bits of the memory with a Vt level lower than the first PV level of the targeted programmed state such that each of them has a Vt level larger than the first PV level of the targeted programmed state.
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申请公布号 |
US2008232164(A1) |
申请公布日期 |
2008.09.25 |
申请号 |
US20070723352 |
申请日期 |
2007.03.19 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
TSAI FU-KAI;LIN YUNG-FENG |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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