| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method for a resistance-change type memory device by which a forming operation can be finished in a short period of time and a highly reliable memory operation can be performed by applying the voltage of appropriate extend to a variable resistance element during the forming operation of the variable resistance element, and to provide the resistance-change type memoy device. SOLUTION: The forming method for the resistance-change type memory device 20, which includes a memory cell 12 including a variable resistance element 11, a resistance part 14 including a forming resistor 13 connected in series to the memory cell 12, and a driving circuit part 15 for driving the memory cell 12 via the resistance part 14, comprises: (A) initial forming step S1 of generating at least a binary transient resistance value from the initial resistance value of the memory cell 12; (B) a forming step S1 of stabilizing the transient resistance value as a memory cell resistance value; and (C) a forming resistance value minimizing step S3 of minimizing the resistance value of the forming resistor 13. COPYRIGHT: (C)2008,JPO&INPIT |
