Electron beam apparatus, a device manufacturing method using the same apparatus, a pattern evaluation method, a device manufacturing method using the same method, and a resist pattern or processed wafer evaluation method

摘要

An object of the present invention is to provide an electron beam apparatus, in which a plurality of electron beams, e.g., four electron beams, is produced for one optical axis with a relatively high current achieved for each electron beam. Provided is an electron beam apparatus comprising: an electron beam emitter (32) having an electron gun (30), said electron gun (30) disposed along an optical axis (23) and operable to emit a plurality of off-axis electron beams along a direction defined by a certain angle with respect to the optical axis (23); a plurality of apertures (34) disposed at a location offset from the optical axis (23); and an electromagnetic lens (7) for forming a magnetic field between the electron gun (30) and the apertures (34) to control the plurality of off-axis electron beams emitted from the electron gun (30) so that the plurality of off-axis electron beams passes through the apertures (34).