发明名称 MANUFACTURING METHOD OF SILSESQUIOXANE-BASED INSULATION FILM
摘要 PROBLEM TO BE SOLVED: To provide a method capable of providing a silsesquioxane-based insulation film obtainable in a low-temperature process, high in electrical insulation quality, having an excellent surface texture. SOLUTION: This manufacturing method of a silsesquioxane-based insulation film includes processes of: preparing a solution containing alkoxysilane, an acid catalyst for facilitating hydrolysis of the alkoxysilane, water and a first aprotic solvent; hydrolyzing the solution by keeping it at 0-50°C; advancing hydrolytic polycondensation by keeping the solution at 50-70°C after the hydrolysis; depressurizing to remove at least the acid catalyst and a by-product after advancing the hydrolytic polycondensation; applying the solution after the depressurization; and forming the silsesquioxane-based insulation film by burning the applied solution at 150-170°C. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009060007(A) 申请公布日期 2009.03.19
申请号 JP20070227643 申请日期 2007.09.03
申请人 SEKISUI CHEM CO LTD;OSAKA CITY;JAPAN SCIENCE & TECHNOLOGY AGENCY 发明人 MATSUKAWA KOYO;HAMADA TAKASHI;AZUMA KENICHI;NAKAMURA HIDE;KUSAKA YASUNARI
分类号 H01L21/312;C07F7/18;C08G77/06;H01L21/336;H01L29/786 主分类号 H01L21/312
代理机构 代理人
主权项
地址