发明名称 |
MANUFACTURING METHOD OF SILSESQUIOXANE-BASED INSULATION FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of providing a silsesquioxane-based insulation film obtainable in a low-temperature process, high in electrical insulation quality, having an excellent surface texture. SOLUTION: This manufacturing method of a silsesquioxane-based insulation film includes processes of: preparing a solution containing alkoxysilane, an acid catalyst for facilitating hydrolysis of the alkoxysilane, water and a first aprotic solvent; hydrolyzing the solution by keeping it at 0-50°C; advancing hydrolytic polycondensation by keeping the solution at 50-70°C after the hydrolysis; depressurizing to remove at least the acid catalyst and a by-product after advancing the hydrolytic polycondensation; applying the solution after the depressurization; and forming the silsesquioxane-based insulation film by burning the applied solution at 150-170°C. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009060007(A) |
申请公布日期 |
2009.03.19 |
申请号 |
JP20070227643 |
申请日期 |
2007.09.03 |
申请人 |
SEKISUI CHEM CO LTD;OSAKA CITY;JAPAN SCIENCE & TECHNOLOGY AGENCY |
发明人 |
MATSUKAWA KOYO;HAMADA TAKASHI;AZUMA KENICHI;NAKAMURA HIDE;KUSAKA YASUNARI |
分类号 |
H01L21/312;C07F7/18;C08G77/06;H01L21/336;H01L29/786 |
主分类号 |
H01L21/312 |
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