发明名称 MAGNETORESISTIVE (MR) ELEMENTS HAVING IMPROVED HARD BIAS SEED LAYERS
摘要 MR devices and associated methods of fabrication are disclosed. An MR device includes an MR element and a bias structure on either side of the MR element for biasing a free layer of the MR element. The bias structure includes an amorphous buffer layer, a first seed layer formed from Cr, a second seed layer formed from a non-magnetic Cr alloy, and a hard bias magnetic layer. The second seed layer formed from the non-magnetic Cr alloy is formed between the Cr seed layer and the hard bias magnetic layer. An example of a non-magnetic Cr alloy is Chromium-Molybdenum (CrMo).
申请公布号 US2009103215(A1) 申请公布日期 2009.04.23
申请号 US20080346324 申请日期 2008.12.30
申请人 FREITAG JAMES M;PINARBASI MUSTAFA M 发明人 FREITAG JAMES M.;PINARBASI MUSTAFA M.
分类号 G11B5/33;B44C1/22 主分类号 G11B5/33
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