| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device having a higher sensitivity and a higher S/N ratio. <P>SOLUTION: The solid-state imaging device includes an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate 1 having the imaging region and the peripheral circuit region on a main surface thereof, a second conductivity type first semiconductor layer 2 formed in the semiconductor substrate 1, a first conductivity type second semiconductor layer 3 formed in the first semiconductor layer 2, a through electrode 8 formed in a through-hole 6 penetrating through the semiconductor substrate 1 in a thickness direction of the semiconductor substrate 1, and a pad portion 5 formed on the semiconductor substrate 1 and connected to the through electrode 8. The through-hole 6 penetrates through a first conductivity type region of the semiconductor substrate 1. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
