Metal-containing films as dielectric capping barrier for advanced interconnects

摘要

A method is provided for forming an interconnect structure for use in semiconductor devices. The method starts with forming a low-k bulk dielectric layer on a substrate and then forming a trench in the low-k bulk dielectric layer. A liner layer is formed on the low-k bulk dielectric layer being deposited conformally to the trench. A copper layer is formed on the liner layer filling the trench. Portions of the copper layer and liner layer are removed to form an upper surface of the low-k bulk dielectric layer, the liner layer, and the copper layer. A metal containing dielectric layer is formed on the upper surface of the low-k bulk dielectric layer, the liner layer, and the copper layer.

主权项

1. A method for forming an interconnect structure, the method comprising:
(a) forming a low-k bulk dielectric layer on a substrate; (b) forming a trench in the low-k bulk dielectric layer; (c) forming a liner layer on the low-k bulk dielectric layer, the liner layer deposited conformally to the trench; (d) forming a copper layer on the liner layer, wherein the copper layer fills the trench; (e) removing portions of the copper layer and the liner layer to expose an upper surface of the low-k bulk dielectric layer, an upper surface of the liner layer, and an upper surface of the copper layer; and (f) forming a metal containing dielectric layer on the upper surface of the low-k bulk dielectric layer, the upper surface of the liner layer, and the upper surface of the copper layer, wherein the metal containing dielectric layer is a metallic compound selected from a group consisting of aluminum nitride, titanium nitride, and zirconium nitride, wherein the metal containing dielectric layer is a material with a dielectric constant less than 12 and a dielectric strength greater than 8 MV/cm.