| 发明名称 | Method for manufacturing semiconductor device | ||
| 摘要 | A method for manufacturing one or more semiconductor devices may include the following steps: providing a dielectric layer on a substrate structure that includes a first electrode and a second electrode; providing a first mask on the dielectric layer; providing a second mask, which overlaps the first mask and has a designated structure, wherein a portion of the first mask is positioned between a first portion and a second portion of the designated structure in a layout view of a process structure that includes the first mask and the second mask; and performing a removal process through the first portion of the designated structure and through the second portion of the designated structure to form a first contact hole and a second contact hole in a remaining portion of the dielectric layer, wherein the two contact holes expose the two electrodes, respectively. | ||
| 申请公布号 | US9368412(B2) | 申请公布日期 | 2016.06.14 |
| 申请号 | US201514723346 | 申请日期 | 2015.05.27 |
| 申请人 | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION;SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION | 发明人 | Yu Yunchu;Shen Yihua;Fu Fenghua |
| 分类号 | H01L21/8238;H01L21/033;H01L21/285 | 主分类号 | H01L21/8238 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A method for manufacturing one or more semiconductor devices, the method comprising: providing a dielectric layer on a substrate structure, wherein the substrate structure includes a first electrode and a second electrode; providing a first mask on the dielectric layer; providing a second mask, which overlaps the first mask and has a first designated structure, wherein a portion of the first mask is positioned between a first portion of the first designated structure and a second portion of the first designated structure in a layout view of a process structure that includes the substrate structure, the dielectric layer, the first mask, and the second mask; and performing a first removal process through the first portion of the first designated structure and through the second portion of the first designated structure for removing portions of the dielectric layer to form a first contact hole and a second contact hole in a first remaining dielectric layer, which is a remaining portion of the dielectric layer, wherein the first contact hole and the second contact hole expose the first electrode and the second electrode, respectively. | ||
| 地址 | CN | ||