发明名称 MANUFACTURING METHOD OF SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST AND SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST AND MANUFACTURING DEVICE
摘要 Provided are a manufacturing method of catalyst-free substrate grown graphene, the catalyst-free substrate grown graphene, and a manufacturing device. The manufacturing method of catalyst-free substrate grown graphene of the present invention comprises the following steps: a. arranging a substrate; b. supplying carbon-containing gas and performing inductively coupled plasma-chemical vapor deposition (ICP-CVD); and c. growing graphene on the substrate without having a catalyst layer through van der Waals type heteroepitaxial growth.
申请公布号 KR20160100156(A) 申请公布日期 2016.08.23
申请号 KR20150022745 申请日期 2015.02.13
申请人 LEE, YOUN TEK 发明人 LEE, YOUN TEK
分类号 C01B31/04 主分类号 C01B31/04
代理机构 代理人
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