发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND RECORDING MEDIUM |
摘要 |
A method of manufacturing a semiconductor device includes forming a seed layer containing a metal element on a substrate by performing a first process and a second process in a time-division manner. The first process supplying and exhausting organic metal-containing gas containing the metal element to the substrate. The second process supplying and exhausting inorganic metal-containing gas containing the metal element to the substrate, and forming a metal-containing nitride film on the substrate on which the seed layer is formed using the seed layer as a seed by performing a third process and a fourth process in a time-division manner. The third process supplying and exhausting the inorganic metal-containing gas to the substrate. The fourth process supplying and exhausting nitrogen-containing gas to the substrate. |
申请公布号 |
US2016284552(A1) |
申请公布日期 |
2016.09.29 |
申请号 |
US201615070387 |
申请日期 |
2016.03.15 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
OGAWA Arito |
分类号 |
H01L21/285;H01L27/108;H01L21/28 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device comprising:
forming a seed layer containing a metal element on a substrate by performing a first process and a second process in a time-division manner a predetermined number of times, the first process supplying and exhausting organic metal-containing gas containing the metal element to the substrate, the second process supplying and exhausting inorganic metal-containing gas containing the metal element to the substrate; and forming a metal-containing nitride film on the substrate on which the seed layer is formed using the seed layer as a seed by performing a third process and a fourth process in a time-division manner a predetermined number of times, the third process supplying and exhausting the inorganic metal-containing gas to the substrate, the fourth process supplying and exhausting nitrogen-containing gas to the substrate. |
地址 |
Tokyo JP |