| 发明名称 |
SUBSTRATE PROCESSING APPARATUS, PROGRAM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A substrate processing apparatus includes: a substrate holder configured to hold a substrate; a gas supply unit configured to supply gas of processing the substrate; a plasma electrode device provided separately above a surface of the substrate, configured to generate plasma of activating the gas supplied from the gas supply unit; and a rotation driving unit connected to the plasma electrode device, configured to horizontally move the plasma electrode device above the substrate. |
| 申请公布号 |
US2016284543(A1) |
申请公布日期 |
2016.09.29 |
| 申请号 |
US201615078503 |
申请日期 |
2016.03.23 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
TOYODA Kazuyuki;SATO Akihiro;HIROCHI Yukitomo |
| 分类号 |
H01L21/02;H01J37/32;H01L21/673 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing apparatus comprising:
a substrate holder configured to hold a substrate; a gas supply unit configured to supply gas of processing the substrate; a plasma electrode device provided separately above a surface of the substrate, configured to generate plasma of activating the gas supplied from the gas supply unit; and a rotation driving unit connected to the plasma electrode device, configured to horizontally move the plasma electrode device above the substrate. |
| 地址 |
Tokyo JP |
