SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A through electrode and a multilayer wiring are provided on a semiconductor substrate, and a bottom layer connection wiring, a lower layer connection wiring, an upper layer connection wiring, and a top layer connection wiring are provided in the multilayer wiring. The through electrode is connected to the bottom layer connection wiring, and a via is arranged at a position other than a position immediately above the through electrode.

主权项

1. A semiconductor device comprising:
an insulating layer located on a semiconductor layer; a multilayer wiring, including a bottom layer wiring, located on the insulating layer; a gate electrode located above the semiconductor layer; and a through electrode extending through the semiconductor layer and in direct contact with the bottom layer wiring of the multilayer wiring, wherein the bottom layer wiring and the gate electrode comprise the same material.