发明名称 Method for double-layer implementation of metal options in an integrated chip for efficient silicon debug
摘要 In one aspect of the present invention, a method provides a connecting path diversion through an upper layer of an integrated circuit by alteration of a connecting path through a lower layer of the integrated circuit. This method enables a circuit path in an integrated circuit to be modified in an accessible layer for testing before the modified circuit path is incorporated in a redesigned integrated circuit design.In another aspect of the present invention, a modified multi-layer integrated circuit chip includes a connecting path formed in a lower layer and a substitute connecting path that is etched in the lower layer. Subsequently, the connecting path formed in the lower layer may be severed.
申请公布号 US6396149(B1) 申请公布日期 2002.05.28
申请号 US20000593284 申请日期 2000.06.13
申请人 SUN MICROSYSTEMS, INC. 发明人 YUAN XUEJUN;JIN XIAOWEI;PYAPALI RAMBABU;HEALD RAYMOND A.;KAKU JAMES M.;DUNN HELEN;TAYLOR THELMA C.;LAI PETER F.;OSTRER AHARON
分类号 H01L21/66;H01L23/525;(IPC1-7):H01L27/10;H01L23/48;H01L23/52;H01L29/40 主分类号 H01L21/66
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