Reduzierung der Rißbildung im Material von III-V-Nitrid-Halbleiterbauelementen bei gleichzeitiger Maximierung der elektrischen Dotierung,申请号DE1997125578-传众专利搜索

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发明名称	Reduzierung der Rißbildung im Material von III-V-Nitrid-Halbleiterbauelementen bei gleichzeitiger Maximierung der elektrischen Dotierung
摘要
申请公布号	DE19725578(B4)	申请公布日期	2004.09.23
申请号	DE1997125578	申请日期	1997.06.17
申请人	LUMILEDS LIGHTING, U.S.	发明人	RUDAZ, SERGE L.
分类号	H01L33/00;H01L33/32;H01S5/30;H01S5/32;H01S5/323;(IPC1-7):H01L33/00	主分类号	H01L33/00
代理机构		代理人
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