发明名称 Semiconductor memory device with debounced write control signal
摘要 A semiconductor memory device having a memory cell array, an input buffer, an output buffer, and an input-output control circuit that receives a write control signal and controls the input and output buffers. The output buffer generates a commencement signal indicating commencement of output. A mask generating circuit generates a mask signal with delayed active-to-inactive transitions from the commencement signal. A masking circuit passes the write control signal to the input-output control circuit while the mask signal is inactive, and holds the write control signal in the write-disabling state while the mask signal is active. The mask signal prevents unintended writing of data in the memory cell array when the write control signal is contaminated by noise from the output buffer.
申请公布号 US2006285183(A1) 申请公布日期 2006.12.21
申请号 US20060438228 申请日期 2006.05.23
申请人 SATO NORIYOSHI;NASU NOBUTAKA;TANABE TETSUYA 发明人 SATO NORIYOSHI;NASU NOBUTAKA;TANABE TETSUYA
分类号 H04N1/46 主分类号 H04N1/46
代理机构 代理人
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