SPIN TRANSISTOR, AND SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a spin transistor with a sufficient magnetoresistance change rate of a source electrode and drain electrode, and provide a semiconductor memory using such the spin transistor. SOLUTION: The spin transistor 1 comprises a source electrode layer S formed of ferromagnetic material, a drain electrode layer D formed of ferromagnetic material, a semiconductor SUB having the source electrode layer S and the drain electrode layer D and schottky-contacting with the source electrode layer S, a gate electrode layer GE provided on the semiconductor SUB directly or through a gate insulating layer GI, and a spin filter layer F provided on the semiconductor SUB through the source electrode layer S for injecting electrons em which is spin-polarized in a same direction as a magnetization direction SM of the ferromagnetic material, which forms the source electrode layer S. COPYRIGHT: (C)2009,JPO&INPIT