发明名称 Electromigration-aware layout generation
摘要 In some embodiments, in a method, cell layouts of a plurality of cells are received. For each cell, a respective constraint that affects a geometry of an interconnect to be coupled to an output pin of the cell in a design layout is determined based on a geometry of the output pin of the cell in the cell layout.
申请公布号 US9367660(B2) 申请公布日期 2016.06.14
申请号 US201414218147 申请日期 2014.03.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. 发明人 Katta Nitesh;Kao Jerry Chang-Jui;Lin Chin-Shen;Tsai Yi-Chuin;Chao Chien-Ju;Yang Kuo-Nan;Wang Chung-Hsing
分类号 G06F17/50 主分类号 G06F17/50
代理机构 WPAT, P.C., Intellectual Property Attorneys 代理人 WPAT, P.C., Intellectual Property Attorneys ;King Anthony
主权项 1. A method, performed by at least one processor, comprising: receiving, by the at least one processor, cell layouts of a plurality of cells; and for each cell of the plurality of cells and with respect to each first geometric characteristic of a plurality of first geometric characteristics considered for a first interconnect coupled to an output pin of the cell in the cell layout, obtaining, by the at least one processor, a respective relationship of a plurality of pairs of second geometric characteristic and output behaviors, each second geometric characteristic and each output behavior of the plurality of pairs of second geometric characteristic and output behavior being considered for the first interconnect and being of the cell, respectively, andthe first geometric characteristic being orthogonal to each second geometric characteristic of the plurality of pairs of second geometric characteristic and output behavior;determining, by the at least one processor, respective electromigration susceptibility (EMS) of the first interconnect having the first geometric characteristic; anddetermining, by the at least one processor, a respective geometric constraint of the first interconnect using a first pair of second geometric characteristic and output behavior in the respective relationship, the output behavior in the first pair of second geometric characteristic and output behavior causing the respective EMS of the first interconnect.
地址 Hsinchu TW