BUFFER STACK FOR GROUP IIIA-N DEVICES

摘要

A method (100) of fabricating a multi-layer epitaxial buffer layer stack for transistors includes depositing a buffer stack on a substrate. A first voided Group IIIA-N layer is deposited (102) on the substrate, and a first essentially void-free Group IIIA-N layer is then deposited (103) on the first voided Group IIIA-N layer. A first high roughness Group IIIA-N layer is deposited (104) on the first essentially void-free Group IIIA-N layer, and a first essentially smooth Group IIIA-N layer is deposited (105) on the first high roughness Group IIIA-N layer. At least one Group IIIA-N surface layer is then deposited (106) on the first essentially smooth Group IIIA-N layer.