| 摘要 |
PROBLEM TO BE SOLVED: To improve mass productivity, reliability and reproducibility, by forming a second conductive layer having resistance higher than a first conductive layer of impurities continuously changing within a specific range. SOLUTION: A foundation film 102 as an insulating film using silicon as a chief ingredient is formed onto a glass substrate 101, and a gate electrode 103 as a conductive film is formed onto the foundation film 102. A gate insulating film consisting of a silicon nitride film 104 and a silicon oxynitride film or a silicon oxide film 105 is formed, and an amorphous semiconductor film 106 using silicon as a main component is shaped onto the gate insulating layer by a decompression thermal CVD method. Impurity concentration in the amorphous semiconductor film 106 is controlled so as to be continuously changed within a range of 5×10<17> -1×10<19> atoms/cm<3> at that time. Accordingly, the semiconductor device having high mass productivity and high reliability and reproducibility can be manufactured. |
