发明名称 Temperature detection device
摘要 A temperature detection device is connected to a temperature sensor, and includes two resistors, a transistor and a microcomputer. The temperature sensor is connected to ground. The resistors are connected in series between the temperature sensor and a power supply line. The transistor is connected to the resistor, which is at the power supply line side. The microcomputer switches over a characteristic of a sensor voltage, which is developed at a junction between the resistor and the temperature sensor, to a first characteristic and a second characteristic by switching over the transistor to an on-state and an off-state. The microcomputer calculates a temperature based on the sensor voltage. When the transistor is in the on-state, the microcomputer detects a voltage developed at a low-potential side output terminal of the transistor and calculates the temperature based on the transistor output voltage and the sensor voltage.
申请公布号 US9389128(B2) 申请公布日期 2016.07.12
申请号 US201314091597 申请日期 2013.11.27
申请人 DENSO CORPORATION 发明人 Tashiro Makoto;Marubayashi Hiroki
分类号 G01K7/16;G01K15/00;G01K7/22 主分类号 G01K7/16
代理机构 Posz Law Group, PLC 代理人 Posz Law Group, PLC
主权项 1. A temperature detection device for a temperature sensor, which is connected to a reference potential line at a low-potential side end thereof and varies resistance thereof with temperature of a detection object, the temperature detection device comprising: plural resistors including a first resistor and a second resistor, which are connected in series between a high-potential side end of the temperature sensor and a power supply line of a potential higher than the reference potential; a transistor having two output terminals connected to both ends of the second resistor, which is provided at the power supply line side than the first resistor, which is connected to a high-potential side end of the temperature sensor; and a computer including a switch section and a detection section, the switch section switching over a characteristic of a sensor voltage, which is developed at a junction between the first resistor and the temperature sensor, relative to temperature between a first characteristic and a second characteristic by switching over an on-state and an off-state of the transistor, and the detection section detecting the sensor voltage and calculating the temperature based on the sensor voltage, wherein, when the transistor is in the on-state, the detection section detects a transistor output voltage developed at an output terminal, which is a low-potential side of the two output terminals of the transistor, and calculates the temperature based on the transistor output voltage and the sensor voltage.
地址 Kariya JP