发明名称 Continuous process for the production of nanostructures including nanotubes
摘要 The present invention provides methods for uniform growth of nanostructures such as nanotubes (e.g., carbon nanotubes) on the surface of a substrate, wherein the long axes of the nanostructures may be substantially aligned. The nanostructures may be further processed for use in various applications, such as composite materials. For example, a set of aligned nanostructures may be formed and transferred, either in bulk or to another surface, to another material to enhance the properties of the material. In some cases, the nanostructures may enhance the mechanical properties of a material, for example, providing mechanical reinforcement at an interface between two materials or plies. In some cases, the nanostructures may enhance thermal and/or electronic properties of a material. The present invention also provides systems and methods for growth of nanostructures, including batch processes and continuous processes.
申请公布号 US9394175(B2) 申请公布日期 2016.07.19
申请号 US201514858981 申请日期 2015.09.18
申请人 Massachusetts Institute of Technology 发明人 Hart Anastasios John;Wardle Brian L.;Garcia Enrique J.;Slocum Alexander H.
分类号 C01B31/02;D01F9/12;D01F9/127 主分类号 C01B31/02
代理机构 Wolf, Greenfield & Sacks, P.C. 代理人 Wolf, Greenfield & Sacks, P.C.
主权项 1. A method of growing nanostructures, comprising: exposing a first portion of a porous growth substrate, with a surface on a first side of the porous growth substrate comprising a catalyst material, to a set of conditions selected to cause catalytic formation of nanostructures on the surface, wherein a nanostructure precursor material used in the formation of the nanostructures is transported from a second side of the porous growth substrate to the first side of the porous growth substrate; while exposing the first portion of the growth substrate to the set of conditions, removing nanostructures from a second portion of the surface of the growth substrate; and repeating the exposing and removing acts with said growth substrate at least one time.
地址 Cambridge MA US