MAGNETIC MEMORY DEVICES

摘要

Magnetic memory devices are provided. A magnetic memory device includes a Magnetic Tunnel Junction (MTJ) structure on a contact. Moreover, the magnetic memory device includes an insulating structure and an electrode between the MTJ structure and the contact. In some embodiments, a first contact area of the electrode with the MTJ structure is smaller than a second contact area of the insulating structure with the MTJ structure.

主权项

1. A magnetic memory device, comprising:
a lower insulating layer on a substrate; an insulating structure on the lower insulating layer; a lower contact in the lower insulating layer; a lower electrode in the insulating structure and electrically connected to the lower contact; and a magnetic tunnel junction pattern in contact with at least a portion of a top surface of the insulating structure and at least a portion of a top surface of the lower electrode, wherein the lower electrode comprises a bottom portion and a protruding portion protruding from a top surface of the bottom portion toward the magnetic tunnel junction pattern, wherein at least a portion of the top surface of the bottom portion of the lower electrode is in contact with the insulating structure, and wherein a root-mean-square roughness of the top surfaces of the insulating structure and the lower electrode that are in contact with the magnetic tunnel junction pattern ranges from 0.01 nanometers (nm) to 1 nm.