| 发明名称 |
Semiconductor Device and Method of Manufactures |
| 摘要 |
A semiconductor device and method of manufacture is provided. A reflowable material is placed in electrical connection with a through via, wherein the through via extends through an encapsulant. A protective layer is formed over the reflowable material. In an embodiment an opening is formed within the protective layer to expose the reflowable material. In another embodiment the protective layer is formed such that the reflowable material is extending away from the protective layer. |
| 申请公布号 |
US2016218049(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201514604603 |
申请日期 |
2015.01.23 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Jing-Cheng;Tsai Po-Hao;Cheng Li-Hui |
| 分类号 |
H01L23/48;H01L23/00;H01L25/00;H01L21/768;H01L25/065;H01L23/31;H01L21/56 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first semiconductor die encapsulated by an encapsulant; a through via extending through the encapsulant and laterally separated from the first semiconductor die; a first reflowable conductive material in electrical connection with the through via; and a protective layer at least partially over the first reflowable conductive material and the first semiconductor die, wherein the protective layer has an opening that exposes the first reflowable conductive material. |
| 地址 |
Hsin-Chu TW |
