发明名称 |
PATTERN FORMING METHOD USING RESIST UNDERLAYER FILM |
摘要 |
A pattern forming method which uses a resist underlayer film having resistance to a basic aqueous hydrogen peroxide solution. A pattern forming method including: a first step of applying a resist underlayer film-forming composition containing a solvent and a polymer having a weight average molecular weight of 1,000 to 100,000 and an epoxy group on a semiconductor substrate that may have an inorganic film on the surface, followed by baking, to form a resist underlayer film; a second step of forming a resist pattern on the resist underlayer film; a third step of dry etching the resist underlayer film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate; and a forth step of wet etching the inorganic film or the semiconductor substrate using the dry-etched resist underlayer film as a mask and a basic aqueous hydrogen peroxide solution. |
申请公布号 |
US2016218013(A1) |
申请公布日期 |
2016.07.28 |
申请号 |
US201414914160 |
申请日期 |
2014.08.27 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
OHASHI Tomoya;KIMURA Shigeo;USUI Yuki;OGATA Hiroto |
分类号 |
H01L21/308;H01L21/311;H01L21/306;H01L21/027 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
1. A pattern forming method comprising:
a first step of applying a resist underlayer film-forming composition containing a solvent and a polymer having a weight average molecular weight of 1,000 to 100,000 and an epoxy group on a semiconductor substrate that may have an inorganic film on the surface, followed by baking, to form a resist underlayer film; a second step of forming a resist pattern on the resist underlayer film; a third step of dry etching the resist underlayer film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate; and a forth step of wet etching the inorganic film or the semiconductor substrate using the dry-etched resist underlayer film as a mask and a basic aqueous hydrogen peroxide solution. |
地址 |
Tokyo JP |