TANTALUM SPUTTERING TARGET

摘要

A tantalum sputtering target containing niobium and tungsten as essential components in a total amount of 1 massppm or more and less than 10 massppm, and having a purity of 99.9999% or higher excluding niobium, tungsten and gas components. Provided is a high purity tantalum sputtering target comprising a uniform and fine structure which is adjusted to be within an optimal range and which enables deposition of a uniform film at a high deposition rate in a stable manner.

主权项

1. A disk-shaped tantalum sputtering target having a diameter of 450 mmφ and containing niobium and tungsten as essential components in a total amount of 1 massppm or more and less than 10 massppm, and having a purity of 99.9999% or higher excluding niobium, tungsten and gas components, wherein an average crystal grain size is 50 μm or more and 150 μm or less, variation of the crystal grain size is 20% or less, deposition rate is 8 to 10 Å/sec, and sheet resistance distribution is 1.0 to 2.0%.