High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methods

摘要

Aspects disclosed in the detailed description include high-k (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methods. One type of HK/MG MTP switching device is an MTP metal-oxide semiconductor (MOS) field-effect transistor (MOSFET). When the MTP MOSFET is programmed, a charge trap may build up in the MTP MOSFET due to a switching electrical current induced by a switching voltage. The charge trap reduces the switching window and endurance of the MTP MOSFET, thus reducing reliability in accessing the information stored in the MTP MOSFET. In this regard, an HK/MG MTP switching device comprising the MTP MOSFET is configured to eliminate the switching electrical current when the MTP MOSFET is programmed. By eliminating the switching electrical current, it is possible to avoid a charge trap in the MTP MOSFET, thus restoring the switching window and endurance of the MTP MOSFET for reliable information access.

主权项

1. A high-k (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching device comprising:
a metal-oxide semiconductor (MOS) field-effect transistor (MOSFET) comprising:
a body forming a channel region between a source electrode and a drain electrode;a gate electrode positioned above the body; anda dielectric layer disposed between the body and the gate electrode;wherein the MOSFET is configured to operate in a first state when a switching voltage (VGS), which is applied between the gate electrode and the source electrode, is greater than a first threshold voltage for the MOSFET; andwherein the MOSFET is configured to operate in a second state different from the first state when the switching voltage (VGS) is less than a second threshold voltage for the MOSFET; and a switching controller configured to:
apply the switching voltage (VGS) greater than the first threshold voltage between the gate electrode and the source electrode of the MOSFET to program the MOSFET to operate in the first state without an electrical current being generated in the channel region; andapply the switching voltage (VGS) less than the second threshold voltage between the gate electrode and the source electrode of the MOSFET to program the MOSFET to operate in the second state without the electrical current being generated in the channel region.