| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an ESD resistance is less likely to be reduced even when a plane area occupied by a Zener diode in the semiconductor device is reduced.SOLUTION: A semiconductor device 100 comprises a cell part R1 and a gate pad part R2. At an outer edge of the gate pad part R2, a Zener diode 150 that has a first semiconductor layer 151, a second semiconductor layer 152, and a third semiconductor layer 153 is formed. The semiconductor device 100 has an unevenness structure 160 in which a trench region 162 where a trench 166 is formed and a non-trench region 164 where no trench 166 is formed are alternately formed along the outer edge of the gate pad part R2. The first semiconductor layer 151, the second semiconductor layer 152, and the third semiconductor layer 153 are continuously formed over the whole of the unevenness structure 160. A height position of an upper surface of the first semiconductor layer 151, the second semiconductor layer 152, and the third semiconductor layer 153, is higher than that of a surface of a semiconductor base substance 110 even in the trench region 162.SELECTED DRAWING: Figure 1 |
