| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a high surge resistance and a low forward voltage without increasing an element size, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device 1 according to an embodiment comprises: a plurality of first barrier metal layers 4 that fill a groove part 3 and contact a semiconductor substrate 2 at a lateral part of the groove part 3 to form a first Schottky barrier; a second barrier metal layer 5 that forms a second Schottky barrier between the semiconductor substrate 2 and itself, and has ohmic contact between the first barrier metal layers 4 and itself; a guard ring part 10 that forms a first pn junction between the semiconductor substrate 2 and itself; a semiconductor layer 6 of a second conductivity type that is provided at a bottom part of the groove part 3, and that forms a second pn junction between the semiconductor substrate 2 and itself, and in which a breakdown voltage of the second pn junction is lower than both of breakdown voltages of first and second diodes respectively formed by the first and second Schottky barriers, and a breakdown voltage of the first pn junction.SELECTED DRAWING: Figure 1 |
