| 发明名称 |
Microelectronic structure including a conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes and method of fabricating the same |
| 摘要 |
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| 申请公布号 |
EP0697719(A3) |
申请公布日期 |
1997.12.03 |
| 申请号 |
EP19950111973 |
申请日期 |
1995.07.28 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SUMMERFELT, SCOTT R. |
| 分类号 |
H01L27/04;H01L21/02;H01L21/285;H01L21/822;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L29/92;(IPC1-7):H01L21/320;H01G4/008;H01G4/08 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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