| 摘要 |
PROBLEM TO BE SOLVED: To relax stresses and increase the mutual conductance by making the lattice constant of an electron feed layer small and that of a channel layer large relative to the lattice constant of a substrate, and setting the electron feed layer and the channel layer to smaller thicknesses than critical thicknesses. SOLUTION: An undoped GaAs layer to be a buffer layer 2 of 5000Åis formed on a GaAs substrate as a semiconductor substrate 1, an In0.25Ga0.75As layer as a channel layer 3 of 150Åis formed on the buffer layer 2, an n-In0.4 Ga0.6P layer as an electron feed layer 4 of 200Åis formed on the channel layer 3, and an n-GaAs layer as a cap layer 5 of 1000Åis formed on the electron feed layer 4.
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