| 摘要 |
Electrostatic breakdown is avoided during fabrication of individual semiconductor devices using a semiconductor aggregate substrate. The semiconductor aggregate substrate is comprised of a large wafer. A plurality of sections are provided on the surface of the wafer, which are divided by division lines. A display active matrix circuit is integrally formed in each of the segments through normal IC production processing. Guard ring patterns are provided so that they surround the individual display active matrix circuits. A connection pattern is also provided for commonly connecting the guard ring patterns adjoining each other through the division lines. The connection pattern has opening structures for dealing with an external overcurrent on both sides of the division lines. The opening structures are constituted by, for example fuse patterns.
|
