| 摘要 |
The invention relates to a filter window for EUV lithography comprising a pellicle, a wire structure for supporting the pellicle, characterized in that the pellicle comprises a first layer comprising at least one of AlN, Ru, Ir, Au, SiN, Rh, C. A pellicle with these materials has a very low EUV absorption in combination with a minimal oxidation rate. In a particular embodiment, the thickness of the pellicle is between 30 nm and 100 nm. It can be easily checked that absorption of EUV radiation of such a thin pellicle is equal to known filter windows, i.e. about 50% at a wavelength of 13.5 nm wavelength, but the oxidation of the pellicle according to the invention is much smaller. The filter window can for example be used to separate a Projection Optics box and a wafer compartment of the apparatus or to shield a reticle from particle contamination.
|
