发明名称 |
Dual damascene integration of ultra low dielectric constant porous materials |
摘要 |
A dual damascene interconnect structure having a patterned multilayer of spun-on dielectrics on a substrate is provided. The structure includes: a patterned multilayer of spun-on dielectrics on a substrate, including: a cap layer; a first non-porous via level low-k dielectric layer having thereon metal via conductors with a bottom portion and sidewalls; an etch stop layer; a first porous low-k line level dielectric layer having thereon metal line conductors with a bottom portion and sidewalls; a polish stop layer over the first porous low-k dielectric; a second thin non-porous low-k dielectric layer for coating and planarizing the line and via sidewalls; and a liner material between the metal via and line conductors and the dielectric layers. Also provided is a method of forming the dual damascene interconnect structure.
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申请公布号 |
US2005040532(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
US20030645308 |
申请日期 |
2003.08.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KUMAR KAUSHIK A.;MALONE KELLY;TYBERG CHRISTY S. |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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地址 |
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